کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1532939 1512284 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of the ab-initio calculation parameters on prediction of energy of point defects in silicon
ترجمه فارسی عنوان
تأثیر پارامترهای محاسبه اولیه برای پیش بینی انرژی نقاط نقطه در سیلیکون
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی

Point defects play a key role in many microelectronics technologies. Knowledge of the properties of point defects and characteristics of their behavior during ion-beam synthesis of microstructures for use in silicon devices allows one to optimize the conditions of their production, improve their quality and the electronic properties. In this situation, of valuable help in studying the properties of point defects is numerical modeling, especially with the use of quantum mechanical methods based on density functional theory approach. The paper describes a systematic study of the effect of various quantum–mechanical simulation approximations on the calculated energy parameters of defects as applied to simple point defects in silicon. We demonstrate that the choice of the form of the exchange–correlation functional has the strongest effect on the predicted defect formation energy, whereas the variation of the other considered approximations is of secondary importance for simulation predictions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Modern Electronic Materials - Volume 1, Issue 4, December 2015, Pages 103–108
نویسندگان
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