کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1532941 1512284 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Trimethyl(phenyl)silane — a precursor for gas phase processes of SiCx:H film deposition: Synthesis and characterization
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Trimethyl(phenyl)silane — a precursor for gas phase processes of SiCx:H film deposition: Synthesis and characterization
چکیده انگلیسی

The technique of synthesis and purification of trimethyl(phenyl)silane PhSiMe3, allowing to obtain the product with high yield. Individuality of the product was confirmed by elemental analysis for C, H, Si was developed. IR, UV and 1H NMR-spectroscopic studies were used to define its spectral characteristics. Complex thermal analysis and thermogravimetry defined thermoanalytical behavior of PhSiMe3 in an inert atmosphere. Tensimetric studies have shown that the compound has sufficient volatility and thermal stability for use as a precursor in the process of chemical vapor deposition (CVD). The composition and temperature limits of the possible crystalline phase complexes in equilibrium with the gas phase of different composition has been determined by method of thermodynamic modeling. Calculated CVD diagrams allow us to select the optimal conditions of film deposition. The possibility of using trimethyl(phenyl)silane in CVD processes for producing dielectric films of hydrogenated silicon carbide has been demonstrated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Modern Electronic Materials - Volume 1, Issue 4, December 2015, Pages 114–119
نویسندگان
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