کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1532955 996457 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of Si quantum dot/SiOx porous film structures synthesized using hydrogen fluoride technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Properties of Si quantum dot/SiOx porous film structures synthesized using hydrogen fluoride technology
چکیده انگلیسی

Quantum dot/SiOx film structures synthesized using a new hydrogen fluoride technology of silicon nanoparticles in a porous silicon oxide matrix have been studied in detail. A physical mechanism of influence of chemical treatment in HF vapors in air on structural and light emitting properties of nanosized silicon film porous systems has been proposed. We show that passivation of broken bonds on the surface of Si nanoinclusions as a result of treatment with the participation of oxygen, fluorine and hydrogen atoms reduces the non-emitting recombination channel. A model has been suggested accounting for the shift of the photoluminescence spectrum towards the blue region as a result of treatment due to a decrease in the sizes of the Si quantum dots during the oxidation of their surface layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Modern Electronic Materials - Volume 1, Issue 1, March 2015, Pages 16–21
نویسندگان
, , , , , , , ,