کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1533270 1512549 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers
چکیده انگلیسی
An In0.53Ga0.47As/InP avalanche photodiodes (APD) structure with double multiplication layers and double charge layers has been proposed. The calculated results with considering the dead space effect show that a thin 2nd multiplication layer will reduce the excess noise factor F in this structure for a fixed mean gain . And its performances will reach the best when the 2nd multiplication layer is 0.01 µm, which will reduce the excess noise factor 7% compared to a conventional APD for =10. The effects of 1st and 2nd charge layers on the APD have also been studied in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 374, 1 September 2016, Pages 114-118
نویسندگان
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