کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1534428 | 1512592 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 331, 15 November 2014, Pages 282-286
Journal: Optics Communications - Volume 331, 15 November 2014, Pages 282-286
نویسندگان
Ho Young Chung, Kie Young Woo, Su Jin Kim, Tae Geun Kim,