| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 1534503 | 1512594 | 2014 | 5 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Experimental demonstration of silicon slot waveguide with low transmission loss at 1064 nm
												
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																																												موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													مواد الکترونیکی، نوری و مغناطیسی
												
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												چکیده انگلیسی
												Silicon slot waveguides that can operate at the wavelength of high silicon absorption are experimentally demonstrated on SOI wafer. The measured transmission loss coefficient could be as low as 2.28±0.03 dB/mm at the wavelength of 1064 nm (the slot width of 100 nm), which is much lower than the absorption loss of silicon (5 dB/mm at 1064 nm). According to the simulation, such value is dominated by the surface roughness of sidewalls. The transmission loss is potentially to be reduced to <1 dB/mm if the sidewall roughness could be reduced to ~5 nm. We believe that this work could pave the way to achieving all silicon photonic integrated circuits, which are attractive for future optical interconnect and chemical/biological analysis.
ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 329, 15 October 2014, Pages 168–172
											Journal: Optics Communications - Volume 329, 15 October 2014, Pages 168–172
نویسندگان
												Xiangdong Li, Xue Feng, Xian Xiao, Kaiyu Cui, Fang Liu, Yidong Huang,