کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1534595 1512602 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface activation behavior of negative-electron-affinity exponential-doping GaAs photocathodes
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Surface activation behavior of negative-electron-affinity exponential-doping GaAs photocathodes
چکیده انگلیسی

In view of the effect of doping structure on the surface activation behavior, the Cs–O activation experiments under the same preparation condition were performed on the exponential-doping and uniform-doping GaAs photocathodes. The activation results show that, compared with the uniform-doping photocathode, the exponential-doping photocathode presents a lower photocurrent peak after the initial Cs activation and a higher photocurrent peak after the Cs–O alternate activation. Based on the double dipole model, the parameters of surface potential barrier are obtained from the calculation of longitudinal energy distribution of emitted electrons according to the ratio of photocurrent peak after Cs–O activation to that after Cs activation. The discrepancy in the photocurrent evolution during the entire activation process is related to the different variations in surface potential barrier profile.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 321, 15 June 2014, Pages 32–37
نویسندگان
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