کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1534604 | 1512602 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Switching from optical bistability to multistability via terahertz signal radiation in a InGaN/GaN quantum dot nanostructure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Switching from optical bistability to multistability via terahertz signal radiation in a InGaN/GaN quantum dot nanostructure Switching from optical bistability to multistability via terahertz signal radiation in a InGaN/GaN quantum dot nanostructure](/preview/png/1534604.png)
چکیده انگلیسی
In this paper, the effect of terahertz signal field on optical bistability and multistability in InGaN/GaN quantum dot nanostructure inside a unidirectional ring cavity is investigated. Quantum dot nanostructure is designed numerically by Schrödinger and Poisson equations which solve self consistently. By size control of quantum dot and external voltage, one can design a four level quantum dot with appropriate energy levels which can be suitable for controlling the optical bistability and multistability by terahertz signal field. It is found that the frequency detuning and intensity control of terahertz signal radiation as well as the dephasing decay rates can influence the optical bistability and multistability behaviors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 321, 15 June 2014, Pages 104–109
Journal: Optics Communications - Volume 321, 15 June 2014, Pages 104–109
نویسندگان
Seyyed Hossein Asadpour, H. Rahimpour Soleimani,