کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1534607 | 1512602 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Terahertz emission from δ-doped GaAs and GaAs/AlGaAs: A comparative Monte Carlo study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Terahertz emission from δ-doped GaAs and GaAs/AlGaAs: A comparative Monte Carlo study Terahertz emission from δ-doped GaAs and GaAs/AlGaAs: A comparative Monte Carlo study](/preview/png/1534607.png)
چکیده انگلیسی
Pulsed terahertz emission from the optically excited δ-doped GaAs and GaAs/AlGaAs structures is analyzed by ensemble Monte Carlo simulations. It is found that the amplitude of the transient photocurrent in the δ-doped GaAs structure is slightly lower than the amplitude of the transient photocurrent in the δ-doped GaAs/AlGaAs heterostructure. The evolution of the photoexcited electron-hole plasma on a long time scale after optical pulse is investigated. The results of the simulations show that the recovery rate of the δ-doped GaAs structure after optical pulse significantly exceeds the recovery rate of the δ-doped GaAs/AlGaAs heterostructure. The increased power of the terahertz emission from the δ-doped GaAs structure is expected due to the enhanced recovery rate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 321, 15 June 2014, Pages 90-95
Journal: Optics Communications - Volume 321, 15 June 2014, Pages 90-95
نویسندگان
Antanas Reklaitis,