کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1535906 1512637 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Selecting of modes in nano-laser of silicon quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Selecting of modes in nano-laser of silicon quantum dots
چکیده انگلیسی

In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal used to select model can produce a sharp peak at 2.076 eV in the nano-laser. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 285, Issues 13–14, 15 June 2012, Pages 3217–3221
نویسندگان
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