کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1535956 1512636 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.5 μm
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.5 μm
چکیده انگلیسی

Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) emitting around 1.5 μm is investigated both above and below the threshold. Above the threshold, LEFs at three different wavelengths around the gain peak of 1.53 μm by the injection locking technique are obtained to be 1.63, 1.37 and 1.59. Then by Hakki–Paoli method LEF is found to decrease with increased current and shows a value of less than 1 below the threshold. These small LEF values have clearly indicated that our developed InAs/InP QDs are perfect and promising gain materials for QD MWLs, QD mode-locked lasers (QD MLLs) and QD distributed-feedback (QD DFB) lasers around 1.5 μm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 285, Issues 21–22, 1 October 2012, Pages 4372–4375
نویسندگان
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