کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1536628 | 996570 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancing the photoluminescence intensity of silicon-rich nitride film by localized surface plasmon enhanced photo-excitation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhancing the photoluminescence intensity of silicon-rich nitride film by localized surface plasmon enhanced photo-excitation Enhancing the photoluminescence intensity of silicon-rich nitride film by localized surface plasmon enhanced photo-excitation](/preview/png/1536628.png)
چکیده انگلیسی
The photoluminescence of silicon-rich nitride (SRN) film was coupled with the surface plasmon (SP) of Ag island film. It shows that the photoluminescence (PL) enhancement or quenching is strongly dependent on the excitation wavelength. When the excitation wavelength is near the SP resonance spectral region, the Ag islands act as a photo antenna, leading to the enhancement of the excitation cross-sections and therefore the photoemission enhancement. Furthermore, it is demonstrated that the metal island size also has an influence on the emission enhancement, but the enhancement is much more decided by the excitation wavelength than by the Ag island radiative scattering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 285, Issue 7, 1 April 2012, Pages 1864–1867
Journal: Optics Communications - Volume 285, Issue 7, 1 April 2012, Pages 1864–1867
نویسندگان
Peihong Cheng, Dongsheng Li, Min Xie, Deren Yang, Jilong Bao,