High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon

We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 × 1020 cm− 3 were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of ~ 2.25 dB/cm at 1531.5 nm was achieved with 20 mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5 mW.