Thermal simulation of InP-based 1.3 μm vertical cavity surface emitting laser with AsSb-based DBRs

In this paper, the thermal analysis of double-intracavity tunnel-junction vertical cavity surface emitting laser is theoretically performed using simulation software PICS3D which self-consistently combines 3D simulation of carrier transport, self-heating and optical wave-guiding. Excellent agreement between simulation and measurement is obtained by careful adjustment of material parameter in model. The temperature distribution of the device is obtained at 20 °C and 6o °C stage temperature. Quantum well maximum temperature for operating device is in very good agreement with experimental results.Simulation results show that Joule heating is the main heat source in device. Vertical electron escape into Separate Confinement Heterostructure causes thermal power roll-off. Self-heating and optical reductions are the triggering mechanisms behind the leakage current. Laser design variations are shown to allow a significant increase in the maximum output power. This optimized structure can also enhance the stimulated recombination rate and decrease the Auger recombination rate.