InGaN MQW violet laser diode performance with quaternary AlInGaN blocking layer

Violet laser diode performance with AlInGaN blocking layer has numerically been investigated by using ISE TCAD software simulation program. The effects of AlInGaN blocking layer have been studied from different perspectives, the threshold current, output power, optical intensity, and temperature characteristics. In this study, simulation results indicated that the use of AlGaInN instead of the conventional AlGaN blocking layer leads to decreasing the threshold current while this blocking layer increases the optical intensity and output power when the mole fractions of Al and Ga are carefully chosen. The laser diode survives above 370 K.