کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1539015 | 996627 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes](/preview/png/1539015.png)
چکیده انگلیسی
The optical characteristics of ultraviolet-violet InGaN laser diodes with different numbers of quantum wells under normal and reversed polarizations are numerically investigated. For the laser structures under normal polarization, the lowest threshold current is obtained when the number of quantum wells is two in the spectral range of 380–408 nm. For the laser structures under reversed polarization, the single quantum-well laser structure possesses the lowest threshold current. The simulation results suggest that the physical origin for these phenomena is caused by the sufficiently suppressed electron and hole leakage currents when the laser diode is under reversed polarization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 283, Issue 19, 1 October 2010, Pages 3698–3702
Journal: Optics Communications - Volume 283, Issue 19, 1 October 2010, Pages 3698–3702
نویسندگان
Yen-Kuang Kuo, Syuan-Huei Horng, Miao-Chan Tsai, Sheng-Horng Yen, Shu-Hsuan Chang,