Beam properties of injection profiled quantum dot lasers

The impact of injection current profiling on the spatial mode structure of quantum dot semiconductor lasers is investigated. Numerical simulations based on a spatial extension of a simple rate equation model for quantum dot devices reveal the role of non-resonant carries in the appearance of strong dips in the optical field of the device. Symmetry breaking may also occur whereby the position of the dip shifts from the centre of the injection region.