Experimental evidence of a non-relationship between photorefractive inhibition and photoconductivity increase in LiNbO3:Mg

By means of measurements of both photoconductivity and two-wave mixing using cw 532 nm laser light, a direct relationship between optical damage resistance and photoconductivity coefficient for several congruent magnesium-doped lithium niobate crystals, with concentrations below and above the threshold of around 4.6 mol% MgO in melt, has not been observed. Specifically, when the polar axis is parallel to the photorefractive grating vector formed by two-interference beams, an increase of optical-damage resistance above the threshold is obtained. However, the photoconductivity coefficient is of the same magnitude of those samples below the threshold. On the other hand, when the optical axis is perpendicular to the grating vector, a decrease of the refractive index grating for crystals below the threshold could be observed, but even for this case the photoconductivity coefficient is unchanged, except for only one specimen with high magnesium level which exhibits simultaneously photorefractive response and high photoconductivity. These results suggest that the increase of photoconductivity is not very essential in the process of photorefractive inhibition; rather, the distribution of magnesium ions with respect to polar axis is an important parameter in the mechanism of optical-damage resistance.