The study of the radiative lifetimes of 3pnd1F3 and 3pnd3D3 of Si I

The energy levels and lifetimes of 3pnd1F3 (n = 3–15) and 3pnd3D3 (n = 3–18) of neutral silicon are calculated and predicted by means of the multichannel quantum defect theory (MQDT). In addition, this paper corrects the assignment mistakes of 3pnd1F3, 3pnd3F3 for n > 8, and predicts many positions and lifetime values of the energy state which are not obtained in theory and experiment up to now, and analyzes the perturbation images between the channels.