کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1542490 996721 2006 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Adiabatic passage schemes in coupled semiconductor nanostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Adiabatic passage schemes in coupled semiconductor nanostructures
چکیده انگلیسی

Adiabatic passage schemes in coupled semiconductor quantum dots are discussed. For optical control, a doped double-dot molecule is proposed as a qubit realization. The quantum information is encoded in the carrier spin, and the flexibility of the molecular structure allows to map the spin degrees of freedom onto the orbital ones and vice versa, which opens the possibility for high-finesse quantum gates by means of stimulated Raman adiabatic passage. For tunnel-coupled dots, adiabatic passage of two correlated electrons in three coupled quantum dots is shown to provide a robust and controlled way of distilling, transporting and detecting spin entanglement, as well as of measuring the rate of spin disentanglement. Employing tunable interdot coupling the scheme creates, from an unentangled two-electron state, a superposition of spatially separated singlet and triplet states, which can be discriminated through a single measurement. Finally, we discuss phonon-assisted dephasing in quantum dots, and present control strategies to suppress such genuine solid-state decoherence losses.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 264, Issue 2, 15 August 2006, Pages 426–434
نویسندگان
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