کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1542623 | 1512644 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission](/preview/png/1542623.png)
A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of −18.9 dBm at bit-error-rate of 10−10 is confirmed.
Journal: Optics Communications - Volume 260, Issue 2, 15 April 2006, Pages 666–669