Reduction of interface traps at the amorphous-silicon/crystalline-silicon interface by hydrogen and nitrogen annealing

We show a reduction in the interface trap density (Dit) at the amorphous-silicon/crystalline-silicon interface by annealing in nitrogen (95%) and hydrogen (5%) for 10, 20 and 25 min at 400 °C. Fabricated a-Si(n+)/c-Si(p)/c-Si(p+) heterojunction solar cells were measured both in the dark and optically under 1 sun after annealing. The dark current reduces from ∼9.5 × 10−4 mA/cm2 at −0.5 V to ∼3.02 × 10−5 mA/cm2 after annealing for 25 min at 400 °C. Under AM1.5G the open circuit voltage (Voc) increases from 0.57 V to 0.62 V. The short circuit current density (Jsc) increases from 12.1 mA/cm2 to 13.2 mA/cm2 and the fill-factor (FF) increases from 61.18% to 68.07%. The efficiency increases from 4.28% to 5.55%. The peak External Quantum Efficiency (EQE) increases from 55% to 63%. In addition, the Dit profile at the a-Si/c-Si interface is modeled and simulated. Trap Assisted Tunneling (TAT) model along with electric field enhancement via the Poole Frenkel Effect is included as Electron–Hole–Pair (EHP) generation mechanisms. Combining the simulation and annealing results reveals a 90% reduction in Dit at the a-Si/c-Si interface.