کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1550455 | 1513123 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling and experiments of microcrystalline silicon film deposited via VHF-PECVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
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چکیده انگلیسی
A 1-D plasma model coupled with a well-mixed reactor model was used to simulate the growth properties of hydrogenated microcrystalline silicon film deposited by very high frequency plasma-enhanced chemical vapor deposition from SiH4 and H2 gas mixtures. Plasma parameters of the former, such as electron density and electron temperature, were determined and used as input values for the latter, in which concentrations of gas phase species, crystalline orientation, hydrogen content, surface fraction of dangling bonds, and deposition rate were calculated. Simultaneously, a series of in situ optical emission spectroscopy measurements and film depositions were carried out to investigate the correlation between the model and the experiments. Desired agreements between both were achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 94, August 2013, Pages 155-161
Journal: Solar Energy - Volume 94, August 2013, Pages 155-161
نویسندگان
Yongsheng Chen, Xiping Chen, Yuechao Jiao, Xiuli Hao, Jingxiao Lu, Shi-e Yang,