The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films for hydrogen production

Pure and Zn, Sb, Ni-doped CuInS2 films were prepared by chemical bath deposition method. Structural, morphological, optical, and photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the tetragonal CuInS2 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48–1.54 eV and 2.38 × 1018–9.38 × 1019, respectively. The maximum photocurrent density of samples with a potential of −1.0 V vs. a Pt electrode was found to be −8.58 mA/cm2 with the largest hydrogen production capability of 33.26 μmol/cm2 under illumination using a 300 W Xe lamp system.

► Zn, Sb and Ni as dopants for CuInS2 films.
► Crystalline, phase pure films were grown at 80 °C.
► Doping element and doping concentration affect conductivity type of films.
► Donor-type defects significantly enhance photocatalytic performance of films.