Band gap optimization of p–i–n layers of a-Si:H by computer aided simulation for development of efficient solar cell

The p-layer band gap and its thickness strongly influence the efficiency of hydrogenated amorphous silicon (a-Si:H) p–i–n solar cell, i and n-layer band gaps also play key role. In the present work, p, i and n layer band gaps as 2.1 eV (at thickness 10 nm), 1.75 eV (at thickness 400 nm) and 1.95 eV (at thickness 30 nm), respectively and acceptor and donor concentrations as 1 × 1018 cm−3and 1 × 1020 cm−3, respectively, are optimized for obtaining efficient a-Si:H p–i–n solar cell by computer aided one-dimensional AFORS-HET software. It is important to mention that when p-layer thickness is changed to 5 nm, maximum efficiency is obtained at p-layer band gap of 2.2 eV. Such an optimized value would further help to prepare efficient a-Si:H p–i–n solar cells experimentally.

► Simulation study of a-Si:H p–i–n solar cells.
► Band gap optimization of p, i, n layers of a-Si:H for development of efficient solar cell.
► Effect of thickness of p-layer on efficiency of a-Si:H p–i–n solar cell.