کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1551309 998126 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell
چکیده انگلیسی

The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (Dit), the resistivity of p-type silicon substrates (ρ  ) and then work function of transparent conductive oxide (ϕTCOϕTCO) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on ρ   and ϕTCOϕTCO were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 84, Issue 5, May 2010, Pages 777–783
نویسندگان
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