کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1551309 | 998126 | 2010 | 7 صفحه PDF | دانلود رایگان |

The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (Dit), the resistivity of p-type silicon substrates (ρ ) and then work function of transparent conductive oxide (ϕTCOϕTCO) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on ρ and ϕTCOϕTCO were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed.
Journal: Solar Energy - Volume 84, Issue 5, May 2010, Pages 777–783