Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique

Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 104, 15 June 2015, Pages 219-224

T.M. Shen, S.J. Wang, Y.T. Tung, R.L. Hwang, C.C. Wu, Jeff Wu, Carlos H. Diaz,