External electric field induced band dispersion engineering in Si1−xGex nanowires

- The tuning effects of electric field are related to both F values and inner Ge concentrations of Si1−xGex NWs.
- The incorporation of Ge atoms in the Si1−xGex NWs enriches the band variations.
- The electric field can induce robust and nonlinear tuning of optical properties of Si1−xGex NWs.