کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1561970 | 1513955 | 2012 | 4 صفحه PDF | دانلود رایگان |

The electronic structure of a novel photocatalyst material designed in silico via co-doping of GaN by vanadium and oxygen has been investigated using the DFT + U method. The results show that this codoping approach leads to reduction of the band gap, along with significantly enhanced carrier mobility and photocatalytic activity in visible-light region, which is beneficial towards applications in solar energy conversion as well solar-assisted photocatalysis. Formation energies indicate that co-doping with anions is energetically favorable for cation mono-doping. Codoping by vanadium and oxygen in GaN shifts the Fermi level into the conduction band, resulting in increased carrier mobility and density.
► The VO codoping reduces significantly the formation energy, resulting in substantially enhanced thermodynamic stability.
► Band gap narrowing in VO codoped GaN can extend the absorption edge to the visible-light region.
► Non-compensated codoping of GaN by V and O serves to enhance carrier mobility.
Journal: Computational Materials Science - Volume 54, March 2012, Pages 101–104