A three-dimensional atomic scale simulations of CVD-SiC film growth in {1Â 1Â 1}, {1Â 1Â 0} and {1Â 0Â 0} family of planes

► We established and analyzed three models of 3-dimensional atomic scale CVD-SiC film. ► The results show that different process parameters would result in different tendencies. ► The simulation results may play a guiding role in the experiment for preparing the CVD-SiC films.