کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1562307 | 999584 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomistic simulations of morphology and spreading behavior of cluster beam deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cluster sizes of Co10 (10 atoms of 1 cluster), Co20, and Co30 and Co atoms are deposited to compare the average kinetic energy and surface roughness on a Cu(0Â 0Â 1) substrate using molecular dynamics (MD). The incident atoms do not penetrate into the surface of the substrate for an incident energy of 1Â eV and a deposition rate of 30 atoms/ps. However, Co30 of the incident atoms penetrate into the surface of the substrate for an incident energy of 1Â eV per atom and a deposition rate of 1Â cluster/ps. Therefore, the intermixing and the sputtering is embedded in the surface layers of the substrate in the cluster beam deposition process due to high energy and mobility. The surface becomes smoother with increasing deposition rate and/or substrate temperature. For atomic-level stress, a transition from compressive to tensile stress occurs. The average stresses are â0.38 and â0.19Â GPa when incident Co10 and Co30 are absorbed, respectively. Therefore, the atoms with tensile stress at the surface layers, and the atoms with compressive stress are mainly distributed at the bottom layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 49, Issue 4, October 2010, Pages 850-857
Journal: Computational Materials Science - Volume 49, Issue 4, October 2010, Pages 850-857
نویسندگان
Zheng-Han Hong, Te-Hua Fang, Shiang-Jiun Lin, Shun-Fa Hwang,