کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1562335 999585 2011 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Computational investigation of intermetallic compounds (Cu6Sn5 and Cu3Sn) growth during solid-state aging process
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
Computational investigation of intermetallic compounds (Cu6Sn5 and Cu3Sn) growth during solid-state aging process
چکیده انگلیسی

Computational investigations of the morphological evolution and growth kinetics for intermetallic compounds (IMCs, Cu6Sn5 and Cu3Sn) formed during reaction and aging between Sn-based solder and a copper substrate are presented. Cu-substrate, Cu3Sn (ɛ phase) and Cu6 Sn5 (η phase) layers (or grains), as well as the Sn-liquid phase (or Sn-solid phase) are considered during the soldering (solid-state aging) process. In the simulation, interface regions are defined by the coexistence of two or more phases (at triple points) at a computational grid point. The simulation is performed through the multiphase-field approach. In the phase-field simulation, the grain boundary (GB) diffusion of the η phase as well as the interfacial energy between this phase and the solder alloy are treated as model parameters. Variation of these parameters allows the investigation of the effects of short-circuit diffusion paths and GB wetting on the morphological evolution of the IMC layers. The simulations addresses the growth kinetics of the two IMC layers (Cu6Sn5 and Cu3Sn) during the two processes up to 14 h, illustrating the variation of η and ɛ IMC thickness and the number of η and ɛ grains as the microstructure coarsens.

Research highlightsWe study the application of phase-field models to investigate formation of IMC. High GB diffusion increases η-IMC thickness. High GB diffusion decreases ɛ-IMC thickness during soldering. High L/η interfacial energy decreases GB wetting, resulting faster grain coarsening. The kinetics of IMC layers varies based on aging process and existence of ɛ-GB.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 50, Issue 5, March 2011, Pages 1692–1700
نویسندگان
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