کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1563908 | 999624 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Shallow donors in diamond: Be and Mg
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Shallow donors in diamond: Be and Mg Shallow donors in diamond: Be and Mg](/preview/png/1563908.png)
چکیده انگلیسی
The electronic properties of the impurities Be, Mg and the hydrogen complexes Be-H, Mg-H in diamond have been investigated by first-principle calculations. It is found that the interstitial Be- or Mg- doped diamond are of n-type metal conductivity character. Even at low impurity concentration the doped diamond also appears n-type behavior. The further results indicate that the interstitial Be or Mg doping diamond should be synthesized at H-poor conditions to obtain the n-type material because most of hydrogen atom may result in interstitial Be- and Mg- doped diamond p-type semiconductor or insulator. The substitutional Be and Mg show acceptor behaviors and may compensate other interstitial donors in -diamond. Our results are very helpful to the research of n-type doping in diamond for the future experimental work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 44, Issue 4, February 2009, Pages 1286-1290
Journal: Computational Materials Science - Volume 44, Issue 4, February 2009, Pages 1286-1290
نویسندگان
C.X. Yan, Y. Dai, B.B. Huang, R. Long, M. Guo,