کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1564458 | 999653 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structures of the ã1Â 0Â 0ã{0Â 1Â 0}, ã1Â 0Â 0ã{0Â 1Â 1} and 1/2ã1Â 1Â 1ã{0Â 1Â 1} edge dislocations in bcc iron
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The discrete variational method within the framework of density functional theory is used to study the electronic structures of the ã1Â 0Â 0ã{0Â 1Â 0}, ã1Â 0Â 0ã{0Â 1Â 1} and 1/2ã1Â 1Â 1ã{0Â 1Â 1} edge dislocations in bcc Fe, and the density of states, the charge density, the structural energy and the interatomic energy are obtained. The results show that localized electronic states exist in the cores of the ã1Â 0Â 0ã{0Â 1Â 0} and ã1Â 0Â 0ã{0Â 1Â 1} edge dislocations, but not in the 1/2ã1Â 1Â 1ã{0Â 1Â 1} edge dislocation. The features of the ã1Â 0Â 0ã{0Â 1Â 0} edge dislocation are similar to those of the ã1Â 0Â 0ã{0Â 1Â 1} edge dislocation, but different from those of the 1/2ã1Â 1Â 1ã{0Â 1Â 1} edge dislocation. In addition, there is an intrinsic hindrance of the lattice to the dislocation motion, namely, an effect of trapping of lattice on the dislocation. For the 1/2ã1Â 1Â 1ã{0Â 1Â 1} edge dislocation, the interaction between the atoms along the slip direction is much stronger than that normal to the slip direction. However, in the ã1Â 0Â 0ã type edge dislocation, the interatomic bonds along and normal to the slip direction have almost the same strength, and the bond is even stronger normal to the slip direction in the ã1Â 0Â 0ã{0Â 1Â 1} edge dislocation. The results show that the motion of the 1/2ã1Â 1Â 1ã edge dislocation may be easier than that of the ã1Â 0Â 0ã edge dislocation under a stress field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 38, Issue 1, November 2006, Pages 39-44
Journal: Computational Materials Science - Volume 38, Issue 1, November 2006, Pages 39-44
نویسندگان
Li-qun Chen, Chong-yu Wang, Tao Yu,