Simulation of surface relief effect on ALD process

Using kinetic MC model simulation of ALD process is carried out. Influence of surface substrate relief and sticking center concentration on growth rate of ALD films at initial stages of growth are investigated. Relationship between growth rate and nucleus center concentration in a nonlinear regime is obtained. For increasing nucleation rate of ALD process combination of CVD and ALD processes in the first cycle is suggested. To increase ALD layers quality and reduce a nonlinear growth regime formation of loose rough surface layer on the substrate before deposition process is recommended.