کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1570286 | 1000569 | 2014 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and transport investigation of Cd1âxMnxTe semimagnetic semiconductor system
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Cd1âxMnxTe (x = 0.1, 0.2 and 0.3) have been studies. Structural characterization was carried out by X-ray diffraction. The Rietveld program reveals the formation of nano disordered structure. The lattice parameters were found to decrease by the increasing of Mn content. The dc and Ac conductivities of the prepared semimagnetic semiconductor, were measured in a wide range of temperature and frequency. The obtained data reveal that ÏAc (Ï) obey the relation, ÏAc (Ï) = AÏS. The Ac conductivity shows frequency dependent and nearly temperature independent character. The correlated barrier hopping conduction mechanism is applied and single electron hopping between D+ center (Mn+) and D0 (chalcogen atom) is assumed to take place. The magnetic susceptibility was investigated in the temperature range of (170-300) K revealing the paramagnetic behavior described by the Curie-Weiss low.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Radiation Research and Applied Sciences - Volume 7, Issue 1, January 2014, Pages 55-63
Journal: Journal of Radiation Research and Applied Sciences - Volume 7, Issue 1, January 2014, Pages 55-63
نویسندگان
L.A. Wahab, N. Makram, H.H. Hantour,