کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1570558 1514369 2016 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantitative measurement for the microstructural parameters of nano-precipitates in Al-Mg-Si-Cu alloys
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Quantitative measurement for the microstructural parameters of nano-precipitates in Al-Mg-Si-Cu alloys
چکیده انگلیسی


• A facile method for measuring volume fraction of nano-precipitates based on CBED
• An equation to compensate for small invisible precipitates, with 3DAP verification
• Precisions around ± 16% for volume fraction and ± 11% for number density

Size, number density and volume fraction of nano-precipitates are important microstructural parameters controlling the strengthening of materials. In this work a widely accessible, convenient, moderately time efficient method with acceptable accuracy and precision has been provided for measurement of volume fraction of nano-precipitates in crystalline materials. The method is based on the traditional but highly accurate technique of measuring foil thickness via convergent beam electron diffraction. A new equation is proposed and verified with the aid of 3-dimensional atom probe (3DAP) analysis, to compensate for the additional error resulted from the hardly distinguishable contrast of too short incomplete precipitates cut by the foil surface. The method can be performed on a regular foil specimen with a modern LaB6 or field-emission-gun transmission electron microscope. Precisions around ± 16% have been obtained for precipitate volume fractions of needle-like β″/C and Q precipitates in an aged Al-Mg-Si-Cu alloy. The measured number density is close to that directly obtained using 3DAP analysis by a misfit of 4.5%, and the estimated precision for number density measurement is about ± 11%. The limitations of the method are also discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Characterization - Volume 118, August 2016, Pages 352–362
نویسندگان
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