کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1572062 | 1514425 | 2009 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural characterization of TiN coatings on Si substrates irradiated with Ar ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The present study deals with TiN/Si bilayers irradiated at room temperature (RT) with 120 keV Ar ions. The TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers to a thickness of â¼Â 240 nm. After deposition the TiN/Si bilayers were irradiated to the fluences of 1 Ã 1015 ions/cm2 and 1 Ã 1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), grazing angle X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the variation of the lattice constants, mean grain size and micro-strain can be attributed to the formation of the high density damage region in the TiN film structure. It has been found that this damage region is mainly distributed within â¼Â 100 nm at surface of the TiN layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Characterization - Volume 60, Issue 12, December 2009, Pages 1463-1470
Journal: Materials Characterization - Volume 60, Issue 12, December 2009, Pages 1463-1470
نویسندگان
M. PopoviÄ, M. NovakoviÄ, N. BibiÄ,