Preparation and characterization of transparent conductive ZnO:Ga films by DC reactive magnetron sputtering

Gallium-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrate by DC reactive magnetron sputtering. The influence of sputtering power on the structural, electrical, and optical properties of ZnO:Ga films was investigated by X-ray diffraction, scanning electron microscopy (SEM), Hall measurement, and optical transmission spectroscopy. The lowest resistivity of the ZnO:Ga film is 4.48 × 10− 4 Ω·cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (∼ 3.3 eV).