کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1572496 1000684 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of compositional oscillations in InGaAs films induced by MBE cell configuration and substrate rotation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Characterization of compositional oscillations in InGaAs films induced by MBE cell configuration and substrate rotation
چکیده انگلیسی
We examine compositional non-uniformities in InGaAs films grown on InP substrates by molecular beam epitaxy (MBE). Transmission electron microscope (TEM) images of samples cut near the edge of the wafer show periodic bands of contrast typical of a superlattice. Flux variations across the wafer lead to mole fraction oscillations that are dependent on the growth rate and substrate rotation speed. Without careful analysis, this film morphology could be mischaracterized as spontaneous ordering due to strain effects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Characterization - Volume 58, Issue 3, March 2007, Pages 284-288
نویسندگان
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