Microstructure characterization of InAs0.93Sb0.07 films grown by ramp-cooled liquid phase epitaxy

InAs0.93Sb0.07 alloy thin films were grown by ramp-cooled liquid phase epitaxy on (100) InAs substrate using horizontally sliding multi-wells graphite boats. The systematic microstructural characterizations of the epi-grown films were analyzed by X-ray diffraction, scanning electronic microscopy and energy dispersive spectra. Four typical surface morphologies of the films were observed, which depend sensitively on growth parameters such as the growth temperature, the substrate etching time, the flux of the hydrogen, and the cooling range and rate. The film shows high crystal perfection with (100) orientation, as evidenced by X-ray measurement. The crystal quality of the epilayer was evaluated by the X-ray double axes diffraction, and the dislocation density was estimated through fitting the (200) and (400) rocking curves by Gaussian lineshape.