| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 1574893 | 1514733 | 2014 | 9 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Dynamic abnormal grain growth in tantalum
												
											ترجمه فارسی عنوان
													رشد غیرطبیعی پودر دانه در تانتالم 
													
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													دانش مواد (عمومی)
												
											چکیده انگلیسی
												Dynamic abnormal grain growth (DAGG) is a phenomenon that produces one or more very large, abnormal grains during plastic deformation of polycrystalline material at high temperatures. DAGG was previously observed in commercial-purity molybdenum (Mo) and was used to produce large Mo single crystals of centimeters in length. The present investigation is the first to demonstrate DAGG in commercial-purity tantalum (Ta) sheet, another body-centered-cubic refractory metal. DAGG occurs in Ta at temperatures from 1450-1850 °C across strain rates from 3Ã10â5 to 5Ã10â4 sâ1. Grain boundary migration rates during DAGG in Ta are on the order of 10 mm/min. DAGG produces large abnormal grains preferentially oriented with the ã101ã direction approximately parallel to the tensile axis. A unique observation of this investigation is a preponderance of Σ3 special boundary character along the boundaries of large abnormal grains produced in Ta through DAGG. The propensity toward this special boundary character is a result of a relatively large grain size and strong texture in the polycrystalline material prior to DAGG and the typically low energy of Σ3 boundaries, which suppress boundary migration.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 610, 29 July 2014, Pages 76-84
											Journal: Materials Science and Engineering: A - Volume 610, 29 July 2014, Pages 76-84
نویسندگان
												Nicholas A. Pedrazas, Thomas E. Buchheit, Elizabeth A. Holm, Eric M. Taleff, 
											