کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1585755 1514922 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The crystal/glass interface in doped Si3N4
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
The crystal/glass interface in doped Si3N4
چکیده انگلیسی

Internal interfaces are of intrinsic importance to the properties of all materials, and the link between their structure and properties continues to be an active field of research in materials science. Electron microscopy offers several techniques that provide an unparalleled degree of detail in the characterisation of these interfaces. In the present work, the structural arrangements of interfaces in doped silicon nitride ceramics are studied at the atomic scale using the electron-based techniques of high resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy and reduced density function analysis using electrons. The investigation shows that these interfaces have a structure distinct from that of the bounding phases that abut them. Furthermore, this study provides a template for the future investigation of internal interfaces at the atomic scale.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 422, Issues 1–2, 25 April 2006, Pages 77–84
نویسندگان
, , , , , , ,