کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1588901 | 1515143 | 2015 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ion-beam assisted molecular-beam epitaxy was used for direct growth of epitaxial GaN thin films on super-polished 6H-SiC(0001) substrates. The GaN films with different film thicknesses were studied using reflection high energy electron diffraction, X-ray diffraction, cathodoluminescence and primarily aberration-corrected scanning transmission electron microscopy techniques. Special attention was devoted to the microstructural characterization of GaN thin films and the GaN-SiC interface on the atomic scale. The results show a variety of defect types in the GaN thin films and at the GaN-SiC interface. A high crystalline quality of the produced hexagonal GaN thin films was demonstrated. The gained results are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Micron - Volume 73, June 2015, Pages 1-8
Journal: Micron - Volume 73, June 2015, Pages 1-8
نویسندگان
David Poppitz, Andriy Lotnyk, Jürgen W. Gerlach, Jörg Lenzner, Marius Grundmann, Bernd Rauschenbach,