Chemical 3D tomography of 28 nm high K metal gate transistor: STEM XEDS experimental method and results

A new STEM XEDS tomography technique is proposed thanks to the implementation of multi EDX SDD detectors in analytical TEMs. The technique flow is presented and the first results obtained on a 28 nm FDSOI transistor are detailed. The latter are compared with 2D XEDS analysis to demonstrate the interest of the slice extraction in all directions from a large analyzed volume without any 3D overlap effect issues.

► A new STEM XEDS tomography technique thanks to the implementation of multi EDX SDD detectors.
► Technique method and workflow description.
► Analyze of overlap effect: comparison with 2D analysis.
► 3D chemical visualization of a 28 nm FDSOI transistor.