کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1589734 1002006 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of interface of Al–Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Characterization of interface of Al–Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry
چکیده انگلیسی

High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum–nickel (Al–Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning the top Al–Ni layer by a 1-keV Ar sputtering, the sensitivity of the interface oxygen was improved to be twice higher than that before sputtering. The results revealed that the oxygen at the interface relates to the contact characteristics.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Micron - Volume 40, Issue 1, January 2009, Pages 66–69
نویسندگان
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