کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590158 | 1002029 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy](/preview/png/1590158.png)
چکیده انگلیسی
We report on the investigation of composition fluctuations in epitaxially grown (Ga,In)(N,As) epilayers on GaAs(001) substrates by using electron energy-loss spectroscopy (EELS). The N and In concentrations are determined locally with a probe size of about 8Â nm from the low-loss EELS measurements. We demonstrate that the small amount of N incorporating in dilute nitride alloys can be measured quantitatively by the plasmon energy shift with respect to a GaAs reference, and that the In content is analyzed simultaneously from the In 4d transitions, which have been isolated from the overlapping Ga 3d transitions. Our spatially resolved EELS results are utilized to discuss the origin of the inherent composition fluctuations and their influences on the morphological instabilities during epitaxial growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Micron - Volume 37, Issue 5, July 2006, Pages 465-472
Journal: Micron - Volume 37, Issue 5, July 2006, Pages 465-472
نویسندگان
X. Kong, A. Trampert, K.H. Ploog,