Solution epitaxy of patterned ZnO nanorod arrays by interference lithography

Aligned ZnO nanorods with controllable size and tunable pattern pitch were grown at 90 °C in aqueous solutions by employing a nano-pattern fabricated by interference lithography. This method gave perfectly c-axis aligned ZnO nanorods arrays. The optical properties are significantly enhanced by a post-growth treatment combining thermal and plasma treatments. The photoluminescence intensity of the UV emission peak is increased more than 100 times after the post-growth treatments which also led to the occurrence of lasing from the nanorods.