کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590929 | 1515477 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-pressure synthesis and characterization of superconducting boron-doped diamond
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Microcrystalline powders of boron-doped diamond were produced in the C-H-B system under a pressure of 8Â GPa and at a temperature of more than 2000Â K. The presence of boron in the C-B-H system was shown to decrease the temperature-pressure parameters for diamond synthesis compared with those for the binary C-H system (naphthalene). A decrease in the parameters for synthesis in the system with boron may be due to the formation of graphite with less perfect crystal structure during an intermediate stage of diamond formation. Superconducting diamond microcrystals are synthesized in the C-H-B system with boron content of about 5-10Â at% in a mixture with naphthalene. Superconductivity below 3.5Â K in boron-doped diamond powder is detected in AC magnetic susceptibility measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 7, Supplement 1, August 2006, Pages S2-S6
Journal: Science and Technology of Advanced Materials - Volume 7, Supplement 1, August 2006, Pages S2-S6
نویسندگان
E.A. Ekimov, V.A. Sidorov, A.V. Rakhmanina, N.N. Mel'nik, R.A. Sadykov, J.D. Thompson,