کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590930 | 1515477 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Superconducting and normal state properties of heavily hole-doped diamond synthesized at high pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Diamonds, synthesized at high pressures and high temperatures in the presence of boron, are heavily hole-doped by incorporation of boron into the diamond lattice. These diamonds become superconducting below Tc=2-9Â K. Synthesis in the systems B-C and B4C-C at P=9Â GPa and T=2500-2800Â K result in formation of polycrystalline carbonado-like material, whereas synthesis from B-C-H gives small single crystals and intergrowth plates. Dense superconducting bodies can be prepared by compacting these single crystal particles at P=8Â GPa and T=1800Â K. Specific heat and resistivity measurements in magnetic fields prove the bulk nature of superconductivity in all pressure-synthesized samples and provide a consistent set of materials parameters that favor a conventional weak-coupling electron-phonon interpretation of the superconducting mechanism at high hole doping. Schottky barrier tunneling conductance spectra, obtained with contacts fabricated at the surface of these hole-doped diamonds, indicate the appearance of superconducting gap below Tc.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 7, Supplement 1, August 2006, Pages S7-S11
Journal: Science and Technology of Advanced Materials - Volume 7, Supplement 1, August 2006, Pages S7-S11
نویسندگان
V.A. Sidorov, E.A. Ekimov, A.V. Rakhmanina, S.M. Stishov, E.D. Bauer, J.D. Thompson,